Carrier lifetime measurement on electroluminescent metal–oxide–silicon tunneling diodes
نویسندگان
چکیده
The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide– silicon ~MOS! tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall ~SRH! recombination lifetimes are 18 and 25.8 ms for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics. @DOI: 10.1063/1.1405429#
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